NXP Semiconductors CGD942C manual

1. Product proﬁle

1.1 General description

Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V

(DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.

1.2 Features

nHigh output capability

nExcellent linearity

nExtremely low noise

nExcellent return loss properties

nRugged construction

nGold metallization ensures excellent reliability

1.3 Applications

nCATV systems operating in the 40 MHz to 870 MHz frequency range

1.4 Quick reference data

[1] Direct Current (DC)

CGD942C

870 MHz, 23 dB gain power doubler ampliﬁer

Rev. 01 — 7 June 2007 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Gppower gain f = 870 MHz 22 23 24 dB

Itot total current VB=24V [1] - 450 - mA

Contents

Main 1. Product prole 1.1 General description 1.2 Features CGD942C 870 MHz, 23 dB gain power doubler amplier Rev. 01 7 June 2007 Product data sheet NXP Semiconductors CGD942C 870 MHz, 23 dB gain power doubler amplier 2. Pinning information 3. Ordering information 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). 870 MHz, 23 dB gain power doubler amplier 5. Characteristics =35 Bandwidth to 870 MHz; V = 24 V (DC); T C; unless otherwise specied. 6. Package outline Fig 1. Package outline SOT115J 7. Abbreviations 8. Revision history Product data sheet Rev. 01 7 June 2007 6 of 7 9. Legal information 9.1 Data sheet status 9.2 Denitions 9.3 Disclaimers 9.4 Trademarks 11. Contents