Transistors
1
Publication date: January 2003 SJC00021BED
2SA1532Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930
■Features
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −30 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−30 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter saturation voltage VBE VCE = −10 µA, IC = −1 mA − 0.7 V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −20 V, IB = 0 −100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = −5 V, IC = 0 −10 µA
Forward current transfer ratio *hFE VCB = −10 V, IE = 1 mA 50 220
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 150 300 MHz
Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Zrb VCB = −10 V, IE = 1 mA, f = 2 MHz 22 60 Ω
Common-emitter reverse transfer capacitance
Cre VCB = −10 V, IE = 1 mA, f = 10.7 MHz 1.2 2. 0 pF
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9��0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5°
10°
Rank A B C
hFE 50 to 100 70 to 140 110 to 220
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package