Transistors
1
Publication date: November 2002 SJC00026BED
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
■Features
•High speed switching (Pair with 2SC3757)
•Low collector-emitter saturation voltage VCE(sat)
•Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −15 V
Emitter-base voltage (Collector open) VEBO −4V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = −8 V, IE = 0 − 0.1 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = −3 V, IC = 0 − 0.1 µA
Forward current transfer ratio hFE1 *VCE = −1 V, IC = −10 mA 5 0 150
hFE2 VCE = −1 V, IC = −1 mA 30
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 − 0.2 V
Transition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 800 1
500 MHz
Collector output capacitance Cob VCB = −5 V, IE = 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time ton
Refer to the switching time measurement circuit
12 ns
Turn-off time toff 20 ns
Storage time tstg 19 ns
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
Rank Q R
hFE1 50 to 120 90 to 150
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Marking Symbol: AK
This product complies with the RoHS Directive (EU 2002/95/EC).