Transistors

1
Publication date: March 2003 SJC00027BED
2SA1739

Silicon PNP epitaxial planar type

For high speed switching
Complementary to 2SC3938
■Features
•High speed switching
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −15 V
Emitter-base voltage (Collector open) VEBO −4V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = −8 V, IE = 0 − 0.1 µA
Emitter-base cutoff current (Collector open)
IEBO VCE = −3 V, IC = 0 − 0.1 µA
Forward current transfer ratio hFE1 *VCE = −1 V, IC = −10 mA 5 0 150
hFE2 VCE = −1 V, IC = −1 mA 30
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 − 0.2 V
Transition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 800 1
500 MHz
Collector output capacitance Cob VCB = −5 V, IE = 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time ton Refer to the switching time 12 ns
Turn-off time toff measurement circuit 20 ns
Storage time tstg 19 ns
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5˚
10˚
Rank Q R No-rank
hFE1 50 to 120 90 to 150 50 to 150
Marking symbol AXQ AXR AX
Marking Symbol: AX
Product of no-rank is not classified and have no marking symbol for rank.
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).