Transistors
1
Publication date: March 2003 SJC00028BED
2SA1748Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4562
■Features
•High transition frequency fT
•Small collector output capacitance Cob
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −50 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −10 V, IB = 0 −100 µA
Forward current transfer ratio *hFE VCE = −10 V, IC = −2 mA 200 500
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 − 0.3 V
Transition frequency fTVCB = −10 V, IE = 2 mA, f = 200 MHz 250 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 1.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Rank Q R
hFE 200 to 400 250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification