Transistors
1
Publication date: July 2003 SJC00291AED
2SA1790JSilicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −30 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−30 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Rank B C
hFE 70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Unit: mm
Marking Symbol: E
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage VBE VCE = −10 V, IC = −1 mA − 0.7 V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −20 V, IB = 0 −100 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = −5 V, IC = 0 −10 µA
Forward current transfer ratio *hFE VCE = −10 V, IC = −1 mA 70 220
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 150 300 MHz
Noise figure NF VCB = −10 V, IE = 1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Zrb VCB = −10 V, IE = 1 mA, f = 2 MHz 2 2 50 Ω
Reverse transfer capacitance (Common emitter)
Cre VCB = −10 V, IE = 1 mA, f = 10.7 MHz 1.2 2.0 pF