Transistors
1
Publication date: May 2007 SJC00380AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1791GSilicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656G
■Features
•High transition frequency fT
•Small collector output capacitance Cob
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −50 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −10 V, IB = 0 −100 µA
Forward current transfer ratio *hFE VCE = −10 V, IC = −2 mA 200 500
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 − 0.3 V
Transition frequency fTVCB = −10 V, IE = 2 mA, f = 200 MHz 250 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 1.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Rank Q R
hFE 200 to 400 250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification