Transistors
1
Publication date: September 2004 SJC00309AED
2SA1791JSilicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656J
■Features
•High transition frequency fT
•Small collector output capacitance Cob
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −50 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −10 V, IB = 0 −100 µA
Forward current transfer ratio *hFE VCE = −10 V, IC = −2 mA 200 500
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 − 0.3 V
Transition frequency fTVCB = −10 V, IE = 2 mA, f = 200 MHz 250 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 1.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
Rank Q R
hFE 200 to 400 250 to 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Marking Symbol: AL
1 : Base
2 : Emitter EIAJ : SC-89
3 : Collector SSMini3-F1 Package