Transistors
1
Publication date: August 2003 SJC00300AED
2SA1806JSilicon PNP epitaxial planar type
For high speed switching
■Features
•High speed switching
•Low collector-emitter saturation voltage VCE(sat)
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −15 V
Emitter-base voltage (Collector open) VEBO −4V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = −8 V, IE = 0 − 0.1 µA
Emitter-base cutoff current (Collector open)
IEBO VCE = −3 V, IC = 0 − 0.1 µA
Forward current transfer ratio hFE1 *VCE = −1 V, IC = −10 mA 5 0 150
hFE2 VCE = −1 V, IC = −1 mA 30
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.1 − 0.2 V
Transition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 800 1
500 MHz
Collector output capacitance Cob VCB = −5 V, IE = 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time ton Refer to the switching time 12 ns
Turn-off time toff measurement circuit 20 ns
Storage time tstg 19 ns
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
Marking Symbol: AK
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Ranking is not given for any product.
Rank Q R
hFE1 50 to 120 90 to 150