Transistors
1
Publication date: April 2007 SJC00349AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2009GSilicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•Low noise voltage NV
•S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −120 V
Collector-emitter voltage (Base open) VCEO −120 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−20 mA
Peak collector current ICP −50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −120 V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −120 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −50 V, IE = 0 −100 nA
Collector-emitter cutoff current (Base open)
ICEO VCE = −50 V, IB = 0 −1µA
Forward current transfer ratio *hFE VCE = −5 V, IC = −2 mA 180 700
Collector-emitter saturation voltage VCE(sat) IC = −20 mA, IB = −2 mA − 0.6 V
Transition frequency fTVCB = −5 V, IE = 2 mA, f = 200 MHz 200 MHz
Noise voltage NV VCE = −40 V, IC = −1 mA, GV = 80 dB 130 mV
Rg = 100 kΩ, Function = FLAT
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700