Transistors

Publication date : November 2008 SJC00426BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2021G

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC5609G
Features
High forward current transfer ratio hFE
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –7 V
Collector current IC–100 mA
Peak collector current ICP –200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –60 V
Collector-emitter voltage (Base open) VCEO IC = –100 mA, IB = 0 –50 V
Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –7 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = –10 V, IB = 0 –100 mA
Forward current transfer ratio hFE VCE = –10 V, IC = –2 mA 180 390
Collector-emitter saturation voltage VCE(sat) IC = –100 mA, IB = –10 mA – 0.3 – 0.5 V
Transition frequency fTVCB = –10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
Cre VCB = –10 V, IE = 0, f = 1 MHz 2.7 15 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3E