Transistors

1
Publication date: March 2003 SJC00042BED2SA2028

Silicon PNP epitaxial planar type

For DC-DC converter
Features
Low collector-emitter saturation voltage VCE(sat)
High-speed switching
S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 20 VCollector-emitter voltage (Base open) VCEO 20 VEmitter-base voltage (Collector open) VEBO 5VCollector current IC1APeak collector current ICP 3ACollector power dissipation PC150 mWJunction temperature Tj150 °CStorage temperature Tstg 55 to +125 °CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 20 VCollector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 VEmitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5VForward current transfer ratio hFE VCE = 2 V, IC = 100 mA 160 560 Collector-emitter saturation voltage VCE(sat) IC = 200 mA, IB = 10 mA 40 100 mVTransition frequency fTVCB = 10 V, IE = 10 mA, f = 200 MHz 170 MHzCollector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 20 30 pF(Common base, input open circuited)
Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm1: Base2: Emitter3: CollectorEIAJ: SC-70SMini3-G1 PackageNote) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: AT
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)132(0.65) (0.65)0.2
±0.1
0.9
±0.1
0 to 0.10.9
+0.2
–0.1
0.15
+0.10
–0.05
10˚
This product complies with the RoHS Directive (EU 2002/95/EC).