Transistors
1
Publication date: March 2003 SJC00042BED2SA2028Silicon PNP epitaxial planar type
For DC-DC converter
■Features
•Low collector-emitter saturation voltage VCE(sat)
•High-speed switching
•S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO −20 VCollector-emitter voltage (Base open) VCEO −20 VEmitter-base voltage (Collector open) VEBO −5VCollector current IC−1APeak collector current ICP −3ACollector power dissipation PC150 mWJunction temperature Tj150 °CStorage temperature Tstg −55 to +125 °CParameter Symbol Conditions Min Typ Max UnitCollector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −20 VCollector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −20 VEmitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5VForward current transfer ratio hFE VCE = −2 V, IC = −100 mA 160 560 Collector-emitter saturation voltage VCE(sat) IC = −200 mA, IB = −10 mA −40 −100 mVTransition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 170 MHzCollector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 20 30 pF(Common base, input open circuited)■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm1: Base2: Emitter3: CollectorEIAJ: SC-70SMini3-G1 PackageNote) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.Marking Symbol: AT
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10
(0.425)132(0.65) (0.65)0.2±0.1
0.9±0.1
0 to 0.10.9+0.2
–0.1
0.15+0.10
–0.05
5˚10˚