Transistors

1
Publication date: August 2003 SJC00302AED
2SA2078

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC5846
■Features
•High forward current transfer ratio hFE
•SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7V
Collector-base cutoff current (Emitter open)
ICBO VCB = −20 V, IE = 0 − 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = −10 V, IB = 0 −100 µA
Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 180 390
Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA − 0.2 − 0.5 V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 2.2 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5˚
0.15 min.
0.80±0.050.15 min.
0.33
(0.40)(0.40)
12
3
5˚
0.80±0.05
1.20±0.05
+0.05
–0.02 0.10+0.05
–0.02
0.23+0.05
–0.02
Unit: mm
Marking Symbol: 7H
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).