Transistors
1
Publication date: January 2003 SJC00286AED
2SA2084
Silicon PNP epitaxial planar type
For general amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −300 V
Emitter-base voltage (Collector open) VEBO IE = −1 µA, , IC = 0 −5V
Forward current transfer ratio *hFE VCE = −10 V, IC = −5 mA 30 150
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.6 V
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 7 pF
(Common base, input open circuited)
Transition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 50 MHz
Marking Symbol: 7N
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −300 V
Collector-emitter voltage (Base open) VCEO −300 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−70 mA
Peak collector current ICP −100 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank P Q
hFE 30 to 100 60 to 150
This product complies with the RoHS Directive (EU 2002/95/EC).