Transistors

Publication date : May 2007 SJC00384AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2162G

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6036G
Features
Low collector-emitter saturation voltage VCE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –15 V
Collector-emitter voltage (Base open) VCEO –12 V
Emitter-base voltage (Collector open) VEBO –5 V
Collector current IC–500 mA
Peak collector current ICP –1 A
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –15 V
Collector-emitter voltage (Base open) VCEO IC = –1 mA, IB = 0 –12 V
Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –5 V
Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0 – 0.1 mA
Forward current transfer ratio hFE VCE = –2 V, IC = –10 mA 270 680
Collector-emitter saturation voltage VCE(sat) IC = –200 mA, IB = –10 mA –250 mV
Transition frequency fTVCB = –2 V, IE = 10 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = –10 V, f = 1 MHz 4.5 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Marking Symbol: 2U
Pin Name
1. Base
2. Emitter
3. Collector