Transistors

Publication date: May 2007 SJC00386AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2174G

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6054G
Features
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -60 V
Collector-emitter voltage (Base open) VCEO -50 V
Emitter-base voltage (Collector open) VEBO -7V
Collector current IC-100 mA
Peak collector current ICP -200 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg -55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = -10 mA, IE = 0 -60 V
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Emitter-base voltage (Collector open) VEBO IE = -10 mA, IC = 0 - 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE = 0 - 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = -10 V, IB = 0 -100 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -2 mA 160 460
Collector-emitter saturation voltage VCE(sat) IC = -100 mA, IB = -10 mA - 0.2 - 0.5 V
Transition frequency fTVCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = -10 V, IE = 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSMini3-F3
Marking Symbol: 7L
Pin Name
1. Base
2. Emitter
3. Collector