Transistors

Publication date: November 2005 SJC00342AED 1
2SA2174J

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6054J
Features
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0−60 V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0−50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0− 7V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0− 0.1µA
Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0−100 µA
Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 160 460
Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA − 0.2− 0.5V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz 2.2pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 7L
Unit: mm
1: Base
2: Emitter
3: Collector SSMini3-F1 Package
0.27±0.02
3
1 2
0.12+0.03
–0.01
0.80±0.05(0.80)
0.85
1.60±0.05
0 to 0.02
0.10 max.
0.70+0.05
–0.03
(0.375)
5°
5°
1.60+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05
–0.03
This product complies with the RoHS Directive (EU 2002/95/EC).