Transistors

Publication date : October 2008 SJC00416AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0621A

Silicon PNP epitaxial planar type

For low-frequency driver amplification
Complementary to 2SD0592A
Features
Low collector-emitter saturation voltage VCE(sat)
High transition frequency fT
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –5 V
Collector current IC–1 A
Peak collector current ICP –1.5 A
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –60 V
Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V
Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –5 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 mA
Forward current transfer ratio hFE1 *VCE = –10 V, IC = –500 mA 85 340
hFE2 VCE = –5 V, IC = –1 A 50
Collector-emitter saturation voltage VCE(sat) IC = –500 mA, IB = –50 mA – 0.2 – 0.4 V
Base-emitter saturation voltage VBE(sat) IC = –500 mA, IB = –50 mA – 0.85 –1.2 V
Transition frequency fTVCB = –10 V, IE = 50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz 20 30 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base