2SB1218G
2SJC00352AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IB VBE IC VBE VCE(sat) IC
PC TaIC VCE IC IB
hFE ICfT IECob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
012108264
0
120
100
80
60
40
20
T
a
= 25°C
250 µA
200 µA
150 µA
100 µA
50 µA
I
B
= 300 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0300 450150
0
60
50
40
30
20
10
V
CE
= 5 V
T
a
= 25°C
Base current IB (µA)
Collector current I
C
(mA)
0 0.4 0.8 1.61.2
0
400
300
100
250
350
200
50
150
VCE = 5 V
Ta = 25°C
Base-emitter voltage VBE (V)
Base current IB (µA)
02.01.6 0.4 1.2 0.8
0
240
200
160
120
80
40
V
CE
= 5 V
T
a
= 75°C25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
110 100
1000
0.001
0.01
0.1
1
10 I
C
/ I
B
= 10
25°C
25°C
T
a
= 75°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
110 100
1000
0
600
500
400
300
200
100
VCE = 10 V
Ta = 75°C
25°C
25°C
Forward current transfer ratio hFE
Collector current IC (mA)
0.1 1 10 100
0
160
120
40
100
140
80
20
60
V
CB
= 10 V
T
a
= 25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
110 100
0
8
6
2
5
7
4
1
3
Collector output capacitance
(Common base, input open circuited) Cob (pF)
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)