Transistors
1
Publication date: May 2007 SJC00388AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1463GSilicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC2440G
■Features
•High collector-emitter voltage (Base open) VCEO
•Low noise voltage NV
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −150 V
Collector-emitter voltage (Base open) VCEO −150 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta = 25��C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −150 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −100 V, IE = 0 −1µA
Forward current transfer ratio *hFE VCE = −5 V, IC = −10 mA 130 330
Collector-emitter saturation voltage VCE(sat) IC = −30 mA, IB = −3 mA −1V
Transition frequency fTVCB = −10 V, IE = 10 mA, f = 200 MHz 200 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 4 pF
(Common base, input open circuited)
Noise voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB 1 50 mV
Rg = 100 kΩ, Function = FLAT
Rank R S
hFE 130 to 220 185 to 330