Transistors
1
Publication date: February 2003 SJC00097BED
2SB1679Silicon PNP epitaxial planar type
For low-frequency amplification
■Features
•Large collector output capacitance (Common base, input open cir-
cuited) Cob
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −10 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC− 0.5 A
Peak collector current ICP −1A
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2:Rank classification
Rank R S
hFE1 130 to 220 180 to 350
Marking Symbol: 3V
2.1
±0.1
1.3
±0.1
0.3
+0.1
–0.0
2.0
±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5°
10°
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −15 V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −10 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7V
Collector-base cutoff current (Emitter open)
ICBO VCB = −10 V, IE = 0 −100 nA
Forward current transfer ratio *1hFE1 *2VCE = −2 V, IC = − 0.5 A 130 350
hFE2 VCE = −2 V, IC = −1 A 60
Collector-emitter saturation voltage *1VCE(sat) IC = − 0.4 A, IB = −8 mA − 0.16 − 0.30 V
Base-emitter saturation voltage *1VBE(sat) IC = − 0.4 A, IB = −8 mA − 0.8 −1.2 V
Transition frequency fTVCB = −10 V, IE = 50 mA, f = 200 MHz 130 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 22 pF
(Common base, input open circuited)