Transistors
1
Publication date: May 2007 SJC00389AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1722G
Silicon PNP epitaxial planar type
For high breakdown voltage low-frequency amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −100 V
Collector-emitter voltage (Base open) VCEO −100 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−20 mA
Peak collector current ICP −50 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −100 V
Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −100 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V
Collector-base cutoff current (Emitter open)
ICBO VCB = −50 V, IE = 0 −100 nA
Collector-emitter cut-off current (Base open)
ICEO VCE = −50 V, IB = 0 −1µA
Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 200 700
Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = −1 mA − 0.3 V
Transition frequency fTVCB = −5 V, IE = 2 mA, f = 200 MHz 20 0 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
■Package
•Code
SSMini3-F3
•Marking Symbol: 4R
•Pin Name
1.Base
2.Emitter
3.Collector