Transistors

Publication date : October 2008 SJC00420AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1318

Silicon NPN epitaxial planar type

For low-frequency power amplication and driver amplication
Complementary to 2SA0720
Features
Low collector-emitter saturation voltage VCE(sat)
Complementary pair with 2SA0720
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7 V
Collector current IC0.5 A
Peak collector current ICP 1 A
Collector power dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 mA
Forward current transfer ratio hFE1 *VCE = 10 V, IC = 150 mA 85 340
hFE2 VCE = 10 V, IC = 500 mA 40
Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V
Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 1.1 1.5 V
Transition frequency fTVCB = 10 V, IE = –50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cre VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classication
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
Package
Code
TO-92B-B1
Pin Name
1. Emitter
2. Collector
3. Base