Transistors
1
Publication date: March 2003 SJC00101BED
2SC1318A
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0720A
■Features
•High collector-emitter voltage (Base open) VCEO
•Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 80 V
Collector-emitter voltage (Base open) VCEO 70 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC0.5 A
Peak collector current ICP 1A
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 080V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 070V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 150 mA 85 340
hFE2 VCE = 10 V, IC = 500 mA 40
Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.6 V
Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.50 V
Transition frequency fTVCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2:Rank classification
Rank Q R S
hFE1 85 to 170 120 to 240 170 to 340
This product complies with the RoHS Directive (EU 2002/95/EC).