1
Transistors
Publication date: March 2004 SJC00105BED
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
■Features
•High collector-emitter voltage (Base open) VCEO
•High transition frequency fT
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage 2SC1473 VCBO 250 V
(Emitter open)
2SC1473A
300
Collector-emitter voltage 2SC1473 VCEO 200 V
(Base open)
2SC1473A
300
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC70 mA
Peak collector current ICP 100 mA
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta = 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A TO-92-B1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage 2SA1473 VCEO IC = 100 µA, IB = 0 200 V
(Base open)
2SA1473A
300
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 07V
Collector-emitter cutoff 2SA1473 ICEO VCE = 120 V, Ta = 60°C, IB = 01µA
current (Base open)
2SA1473A
VCE = 120 V, IB = 01
Forward current transfer ratio *hFE VCE = 10 V, IC = 5 mA 60 220
Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IB = 5 mA 1.2 V
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 50 80 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 10 pF
(Common base, input open circuited)
Rank Q R
hFE 60 to 150 100 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).