1
Transistors
Publication date: March 2003 SJC00112BED
2SC2295
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1022
Features
Optimum for RF amplification of FM/AM radios
High transition frequency fT
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC30 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 0.1 µA
Forward current transfer ratio *hFE VCB = 10 V, IE = 1 mA 70 220
Transition frequency fTVCB = 10 V, IE = 1 mA, f = 200 MHz 150 250 MHz
Noise figure NF VCB = 10 V, IE = 1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Zrb VCB = 10 V, IE = 1 mA, f = 2 MHz 22 50
Reverse transfer capacitance Cre VCB = 10 V, IE = 1 mA, f = 10.7 MHz 0.9 1.5 pF
(Common emitter)
Unit: mm
Electrical Characteristics Ta = 25°C ± 3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Marking Symbol: V
Rank B C
hFE 70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).