1
Transistors
Publication date: March 2003 SJC00114BED
2SC2404
Silicon NPN epitaxial planar type
For high-frequency amplification
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 030V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Base-emitter voltage VBE VCB = 6 V, IE = −1 mA 0.72 V
Forward current transfer ratio *hFE VCB = 6 V, IE = −1 mA 65 260
Transition frequency fTVCB = 6 V, IE = −1 mA, f = 100 MHz 450 650 MHz
Reverse transfer capacitance Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF
(Common emitter)
Power gain GPVCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB
Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3 .3 dB
Unit: mm
■Electrical Characteristics Ta = 25°C ± 3°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Marking Symbol: U
Rank C D
hFE 65 to 160 100 to 260
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).