Transistors
1
Publication date: March 2003 SJC00117BED
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
■Features
•Satisfactory linearity of forward current transfer ratio hFE
•High collector-emitter voltage (Base open) VCEO
•Small collector output capacitance (Common base, input open cir-
cuited) Cob
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 150 V
Collector-emitter voltage (Base open) VCEO 150 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 150 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 100 V, IE = 01µA
Forward current transfer ratio *hFE VCE = 5 V, IC = 10 mA 130 330
Collector-emitter saturation voltage VCE(sat) IC = 30 mA, IB = 3 mA 1 V
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 160 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 3 pF
(Common base, input open circuited)
Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 150 300 mV
Rg = 100 kΩ, Function = FLAT
■Electrical Characteristics Ta = 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank R S
hFE 130 to 220 185 to 330
This product complies with the RoHS Directive (EU 2002/95/EC).