Transistors
1
Publication date: March 2003 SJC00119BED
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1127
■Features
•Low noise voltage NV
•High forward current transfer ratio hFE
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 55 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC400 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 060V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 055V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 07V
Base-emitter voltage VBE VCE = 1 V, IC = 30 mA 1 V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 1 100 nA
Collector-emitter cutoffcurrent (Base open)
ICEO VCE = 10 V, IB = 0 0.01 1.00 µA
Forward current transfer ratio *hFE VCE = 5 V, IC = 2 mA 180 700
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.6 V
Transition frequency fTVCB = 5 V, IE = −2 mA, f = 200 MHz 200 MHz
Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 15 0 mV
Rg = 100 kΩ, Function = FLAT
■Electrical Characteristics Ta = 25°C ± 3°C
5.0
±0.2
0.7
±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0
±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700
This product complies with the RoHS Directive (EU 2002/95/EC).