Transistors
1
Publication date: February 2003 SJC00125BED
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■Features
•High transition frequency fT
•Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common emitter) Crb
•Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 010V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 01µA
Forward current transfer ratio *1hFE VCE = 4 V, IC = 5 mA 75 220
hFE ratio *2∆hFE hFE2: VCE = 4 V, IC = 100 µA 0.75 1.60
hFE1: VCE = 4 V, IC = 5 mA
Collector-emitter saturation voltage VCE(sat) IC = 20 mA, IB = 4 mA 0.5 V
Transition frequency fTVCB = 4 V, IE = −5 mA, f = 200 MHz 1.4 1.9 2.5 GHz
Collector output capacitance Cob VCB = 4 V, IE = 0, f = 1 MHz 1.4 pF
(Common base, input open circuited)
Reverse transfer capacitance Crb VCB = 4 V, IE = 0, f = 1 MHz 0.45 pF
(Common emitter)
Collector-base parameter rbb' • CCVCB = 4 V, IE = −5 mA, f = 31.9 MHz 11 ps
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Rank classification
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank P Q
hFE 75 to 130 110 to 220
Marking Symbol: 1S
*2:∆hFE = hFE2 / hFE1
This product complies with the RoHS Directive (EU 2002/95/EC).