Transistors
1
Publication date: March 2003 SJC00128BED
2SC3312
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1310
■Features
•Optimum for high-density mounting
•Allowing supply with the radial taping
•Low noise voltage NV
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 55 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 060V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 055V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 07V
Base-emitter voltage VBE VCE = 1 V, IC = 30 mA 1 V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 20 V, IB = 01µA
Forward current transfer ratio *hFE VCE = 5 V, IC = 2 mA 180 700
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 1 V
Transition frequency fTVCB = 5 V, IE = −2 mA, f = 200 MHz 200 MHz
Noise voltage NV VCE = 10 V, IC = 1 mA, GV = 80 dB 15 0 mV
Rg = 100 kΩ, Function = FLAT
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45+0.20
–0.10
7.6
3.0±0.2
(0.8)(0.8)
15.6±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).