Transistors
1
Publication date: April 2007 SJC00357AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3930G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1532G
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC30 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 0.1 µA
Forward current transfer ratio *hFE VCB = 10 V, IE = −1 mA 70 220
Transition frequency fTVCB = 10 V, IE = −1 mA, f = 200 MHz 150 250 MHz
Noise figure NF VCB = 10 V, IE = −1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz 22 50 Ω
Reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 0.9 1.5 pF
(Common emitter)
■Electrical Characteristics Ta = 25°C ± 3°C
Rank B C
hFE 70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
■Package
•Code
SMini3-F2
•Marking Symbol: V
•Pin Name
1.Base
2.Emitter
3.Collector