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Transistors
Publication date: April 2007 SJC00358AED
2SC3931G
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
Optimum for RF amplification of FM/AM radios
High transition frequency fT
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 030V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Base-emitter voltage VBE VCB = 6 V, IE = 1 mA 720 mV
Forward current transfer ratio *hFE VCB = 6 V, IE = 1 mA 65 260
Transition frequency fTVCB = 6 V, IE = 1 mA, f = 200 MHz 450 650 MHz
Common-emitter reverse transfer Cre VCB = 6 V, IE = 1 mA, f = 10.7 MHz 0.8 1.0 pF
capacitance
Power gain GPVCB = 6 V, IE = 1 mA, f = 100 MHz 24 dB
Noise figure NF VCB = 6 V, IE = 1 mA, f = 100 MHz 3.3 dB
Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank C D
hFE 65 to 160 100 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).
Package
Code
SMini3-F2
Marking Symbol: U
Pin Name
1.Base
2.Emitter
3.Collector