Transistors
1
Publication date: February 2003 SJC00144BED
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
■Features
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 100 nA
Emitter-base cutoff current (Collector open)
IEBO VEB = 2 V, IC = 01µA
Forward current transfer ratio hFE VCE = 10 V, IC = 10 mA 40
Transition frequency fTVCE = 10 V, IC = 10 mA, f = 0.8 GHz 4.5 GHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 1.2 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE = 10 V, IC = 20 mA, f = 0.8 GHz 9 12 dB
Maximum unilateral power gain GUM VCE = 10 V, IC = 20 mA, f = 0.8 GHz 12 14 dB
Noise figure NF VCE = 10 V, IC = 5 mA, f = 0.8 GHz 1.3 2.5 dB
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 12 V
Emitter-base voltage (Collector open) VEBO 2.5 V
Collector current IC30 mA
Peak collector current ICP 50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Marking Symbol: 1U
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).