1
Transistors
Publication date: April 2007 SJC00362AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3936G
Silicon NPN epitaxial planar type
For high-frequency amplification
■Features
•Optimum for RF amplification, oscillation, mixing, and IF of
FM/AM radios
•S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC30 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 030V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 020V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Forward current transfer ratio *hFE VCE = 10 V, IC = 1 mA 70 250
Transition frequency fTVCB = 10 V, IE = −1 mA, f = 200 MHz 150 230 MHz
Reverse transfer capacitance Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1.3 pF
(Common emitter)
■Electrical Characteristics Ta = 25°C ± 3°C
Rank B C
hFE 70 to 160 110 to 250
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
■Package
•Code
SMini3-F2
•Marking Symbol: K
•Pin Name
1.Base
2.Emitter
3.Collector