Transistors
1
Publication date: April 2007 SJC00364AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3938GSilicon NPN epitaxial planar type
For high-speed switching
■Features
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 40 V, IE = 0 0.1 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 4 V, IC = 0 0.1 µA
Forward current transfer ratio *hFE VCE = 1 V, IC = 10 mA 60 200
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA 0.17 0.25 V
Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA 1 V
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time ton Refer to the measurement circuit 17 ns
Turn-off time toff 17 ns
Storage time tstg 10 ns
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (E-B short) VCES 40 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC100 mA
Peak collector current ICP 300 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Rank Q R
hFE 60 to 120 90 to 200
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification