Transistors
1
Publication date: May 2007 SJC00366AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748G
■Features
•High transition frequency fT
•Small collector output capacitance (Common base, input open cir-
cuited) Cob
•S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 050V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 050V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 10 V, IB = 0 100 µA
Forward current transfer ratio *hFE VCE = 10 V, IC = 2 mA 200 500
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA 0.06 0.30 V
Transition frequency fTVCB = 10 V, IE = −2 mA, f = 200 MHz 250 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
hFE 200 to 400 250 to 500
■Package
•Code
SMini3-F2
•Marking Symbol: AM
•Pin Name
1: Base
2: Emitter
3: Collector