Transistors
1
Publication date: December 2002 SJC00281BED
2SC4626J
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
Optimum for RF amplification of FM/AM radios
High transition frequency fT
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC30 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg 55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 0 0.1 µA
Forward current transfer ratio *hFE VCB = 10 V, IE = 1 mA 70 220
Transition frequency fTVCB = 10 V, IE = 1 mA, f = 200 MHz 150 250 MHz
Noise figure NF VCB = 10 V, IE = 1 mA, f = 5 MHz 2.8 4.0 dB
Reverse transfer impedance Zrb VCB = 10 V, IE = 1 mA, f = 2 MHz 22 50
Common-emitter reverse transfer Cre VCB = 10 V, IE = 1 mA, f = 10.7 MHz 0.9 1.5 pF
capacitance
Electrical Characteristics Ta = 25°C ± 3°C
Rank B C No-rank
hFE 70 to 140 110 to 220 70 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Unit: mm
Marking Symbol: V
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Product of no-rank is not classified and have no indication for rank.
This product complies with the RoHS Directive (EU 2002/95/EC).