1
Transistors
Publication date: June 2007 SJC00391AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4627GSilicon NPN epitaxial planar type
For high-frequency amplification
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 030V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 03V
Base-emitter voltage VBE VCB = 6 V, IE = −1 mA 720 mV
Forward current transfer ratio *hFE VCB = 6 V, IE = −1 mA 65 160
Transition frequency fTVCB = 6 V, IE = −1 mA, f = 200 MHz 450 650 MHz
Reverse transfer capacitance Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1.0 pF
(Common emitter)
Power gain PG VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB
Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 dB
■Electrical Characteristics Ta = 25°C ± 3°C
Rank C
hFE 65 to 160
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification