Transistors
1
Publication date: January 2003 SJC00282BED
2SC4691JSilicon NPN epitaxial planar type
For high-speed switching
■Features
•Low collector-emitter saturation voltage VCE(sat)
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 40 V, IE = 0 0.1 µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 4 V, IC = 0 0.1 µA
Forward current transfer ratio *hFE VCE = 1 V, IC = 10 mA 60 200
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA 0.17 0.25 V
Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA 1.0 V
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 450 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2 6 pF
(Common base, input open circuited)
Turn-on time ton Refer to the measurement circuit 17 ns
Turn-off time toff 17 ns
Storage time tstg 10 ns
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 40 V
Collector-emitter voltage (E-B short) VCES 40 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC100 mA
Peak collector current ICP 300 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Marking Symbol: 2Y
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R No-rank
hFE 60 to 120 90 to 200 60 to 200
Product of no-rank is not classified and have no indication for rank.
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package