Transistors
1
Publication date: May 2007 SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
Features
High transition frequency fT
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 01µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 1 V, IC = 01µA
Forward current transfer ratio *hFE VCE = 8 V, IC = 20 mA 50 300
Transition frequency fTVCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 8.5 GHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7 9 dB
Maximum unilateral power gain GUM VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB
Noise figure NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB
Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC65 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R S No-rank
hFE 50 to 120 100 to 170 150 to 300 50 to 300
Marking symbol 3 SQ 3SR 3SS 3S
Product of no-rank is not classified and have no indication for rank.
Package
Code
SMini3-F2
Marking Symbol: 3S
Pin Name
1: Base
2: Emitter
3: Collector