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Transistors
1
Publication date: May 2007 SJC00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4808GSilicon NPN epitaxial planar type
For UHF band low-noise amplification
■Features
•Low noise figure NF
•High forward transfer gain S21e2
•High transition frequency fT
•SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 015V
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 010 V
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 01µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 2 V, IC = 01µA
Forward current transfer ratio *hFE VCE = 8 V, IC = 20 mA 50 150 300
Transition frequency fTVCE = 8 V, IC = 15 mA, f = 0.8 GHz 5 6 GHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 0.7 1.2 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE = 8 V, IC = 15 mA, f = 0.8 GHz 11 14 dB
Maximum unilateral power gain GUM VCE = 8 V, IC = 15 mA, f = 0.8 GHz 15 dB
Noise figure NF VCE = 8 V, IC = 7 mA, f = 0.8 GHz 1.3 2.0 dB
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC80 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Pulse measurement