Transistors
1
Publication date: December 2002 SJC00283BED
2SC5295JSilicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■Features
•High transition frequency fT
•Low collector output capacitance (Common base, input open cir-
cuited) Cob
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 01µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 1 V, IC = 01µA
Forward current transfer ratio *hFE VCE = 8 V, IC = 20 mA 50 170
Transition frequency fTVCE = 8 V, IC = 15 mA, f = 1.5 GHz 7.0 8.5 GHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 0.6 1.0 pF
(Common base, input open circuited)
Foward transfer gain S21e2VCE = 8 V, IC = 15 mA, f = 1.5 GHz 7 9 dB
Maximum unilateral power gain GUM VCE = 8 V, IC = 15 mA, f = 1.5 GHz 10 dB
Noise figure NF VCE = 8 V, IC = 7 mA, f = 1.5 GHz 2.2 3.0 dB
■Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC65 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Marking Symbol: 3S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank Q R
hFE 50 to 120 100 to 170
0.27
±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05
–0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00
±0.05
(0.50)(0.50)
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package