1

Transistor

2SC5378

Silicon NPN epitaxial planer type

For low-voltage low-noise high-frequency oscillation
Features
Low noise figure NF.
High gain.
High transition frequency fT.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
2.1±0.1
1.3±0.10.9±0.1
0.7±0.1
0.3
+0.1
–0
0.15
+0.1
–0.05
2.0±0.2
1.25±0.1 0.4250.425
1
3
2
0.650.2 0.65
0 to 0.1
0.2±0.1
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
8
2
80
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
Symbol
ICBO
IEBO
hFE*1
Cob
fT
NF
| S21e |2
Conditions
VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 5V, IC = 10mA
VCB = 5V, IE = 0, f = 1MHz
VCE = 5V, IC = 10mA, f = 2GHz
VCE = 5V, IC = 3mA, f = 1GHz
VCE = 5V, IC = 10mA, f = 1GHz
min
80
8.5
typ
0.6
7
1.6
11
max
1
1
200
1
2
Unit
µA
µA
pF
GHz
dB
dB
*1hFE Rank classification
Rank Q R S
hFE 80 ~ 115 95 ~ 155 135 ~ 200
Marking symbol : HT
Maintenance/
Discontinued
Please visit following URL about latest information.
http://panasonic.net/sc/en