Transistors
1
Publication date: June 2007 SJC00369AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5632G
Silicon NPN epitaxial planar type
For high-frequency amplification and switching
■Features
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 015 V
Emitter-base cutoff current (Collector open)
IEBO VEB = 2 V, IC = 02µA
Forward current transfer ratio hFE VCE = 4 V, IC = 2 mA 100 350
hFE ratio *∆hFE hFE2: VCE = 4 V, IC = 100 µA 0.6 1.5
hFE1: VCE = 4 V, IC = 2 mA
Collector-emitter saturation voltage VCE(sat) IC = 20 mA, IB = 4 mA 0.1 V
Transition frequency fTVCE = 5 V, IC = 15 mA, f = 200 MHz 0.6 1.1 GHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 1.0 1.6 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 8V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*:∆hFE = hFE2 / hFE1
■Package
•Code
SMini3-F2
•Marking Symbol: 2R
•Pin Name
1: Base
2: Emitter
3: Collector