Transistors

1
Publication date: February 2003 SJC00187BED
2SC5654

Silicon NPN epitaxial planar type

For DC-DC converter
■Features
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 20 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 5V
Collector current IC1A
Peak collector current ICP 3A
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 020V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 020V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 05V
Forward current transfer ratio hFE VCE = 2 V, IC = 100 mA 160 560
Collector-emitter saturation voltage VCE(sat) IC = 200 mA, IB = 10 mA 6 0 100 mV
Transition frequency fTVCB = 10 V, IE = −10 mA, f = 200 MHz 180 MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 12 30 pF
(Common base, input open circuited)
■Electrical Characteristics Ta = 25°C ± 3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
Marking Symbol: 2S
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).