1
Publication date: December 2002 SJC00287AED
Transistors
■Electrical Characteristics Ta = 25°C ± 3°C
2SC5829Silicon NPN epitaxial planar type
For high speed switching
■Features
•Allowing the small current and low voltage operation
•High transition frequency fT
•Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open)
ICBO VCB = 10 V, IE = 01µA
Emitter-base cutoff current (Collector open)
IEBO VEB = 1.5 V, IC = 01µA
Forward current transfer ratio hFE VCE = 1 V, IC = 1 mA 100 200
Transition frequency fTVCE = 1 V, IC = 1 mA, f = 0.8 GHz 4 GHz
Collector output capacitance Cob VCB = 1 V, IE = 0, f = 1 MHz 0.4 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE = 1 V, IC = 1 mA, f = 0.8 GHz 6 dB
Maximum unilateral power gain GUM VCE = 1 V, IC = 1 mA, f = 0.8 GHz 15 dB
Noise figure NF VCE = 1 V, IC = 1 mA, f = 0.8 GHz 3.5 dB
Unit: mm
Marking Symbol: X
0.60
±0.05
1.00
±0.05
2
1
3
0.39
+0.01
−0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
0.15
±0.05
2
1
0.35
±0.01
0.05
±0.03
0.05
±0.03
3
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 10 V
Collector-emitter voltage (Base open) VCEO 7V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC10 mA
Collector power dissipation PC50 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.