Transistors

1
Publication date: August 2003 SJC00297AED
2SC5845

Silicon NPN epitaxial planar type

For general amplification
Features
High forward current transfer ratio hFE
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µΑ, IE = 060V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050V
Emitter-base voltage (Collector open) VEBO IE = 10 µΑ, IC = 07V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 10 V, IB = 0 100 µA
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 160 460
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF
(Common base, input open circuited)
Transition frequency fTVCB = 10 V, IE = 2 mA, f = 200 MHz 100 MHz
Electrical Characteristics Ta = 25°C ± 3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) V CEO 50 V
Emitter-base voltage (Collector open) V EBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg 55 to +150 °C
Marking Symbol: 7M
0.40
+0.10
–0.05
(0.65) 1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
10˚
0 to 0.1 1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).