Transistors
1
Publication date: May 2007 SJC00399AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5846GSilicon NPN epitaxial planar type
For general amplification
■Features
•High forward current transfer ratio hFE
•SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µΑ, IE = 060V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 050V
Emitter-base voltage (Collector open) VEBO IE = 10 µΑ, IC = 07V
Collector-base cutoff current (Emitter open)
ICBO VCB = 20 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open)
ICEO VCE = 10 V, IB = 0 100 µA
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 180 390
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF
(Common base, input open circuited)
Transition frequency fTVCB = 10 V, IE = −2 mA, f = 200 MHz 10 0 MH z
■Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
SSSMini3-F1 Package