Transistors

Publication date: June 2007 SJC00371AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5950G

Silicon NPN epitaxial planar type

For general amplification
Complementary to 2SA2122G
Features
High forward current transfer ratio hFE
Smini typ package, allowing downsizing of the equipment and　automatic
insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7 V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55 to +150 °C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 160 460
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V
Transition frequency fTVCB = 10 V, IE = -2 mA, f = 200 MHz 100 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SMini3-F2
Marking Symbol: 7M
Pin Name
1: Base
2: Emitter
3: Collector